Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-4 (2110-2155 MHz) (Vcc= 2.8 V)

Open online SPICE simulator circuit link: rf_BGA7M1N6_DS_b4_2v8.TSC

Single Band LTE LNA BGA7M1N6 Supporting Band-4 (2110-2155 MHz) (Vcc= 2.8 V)

Vcc=2.8 V

S-parameters

Description
- Silicon Germanium Low Noise Amplifier for LTE

Summary of features
- Insertion power gain: 13.0 dB
- Low noise figure: 0.60 dB
- Low current consumption: 4.4 mA
- Operating frequencies: 1805 - 2200 MHz
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 O
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package

Target applications
- LNA for LTE and 3G systems