1200 V 10 A, 5.7 kV (rms) single-channel isolated gate driver IC EiceDRIVER™ 1ED3250MC12H with two-level slew-rate control and active Miller clamp, UL 1577 & VDE 0884-11 certified
Open online SPICE simulator circuit link: power_1200VDC_single_channel_isolated_gate_driver_1ED3250MC12H.tsc
10 A, 5.7 kV (rms) single-channel isolated gate driver IC 1ED3250MC12H with two-level slew-rate
control and active Miller clamp, UL 1577 & VDE 0884-11 certified
The 1ED312xMU12F (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for
IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on
separate source and sink pins or a typical output current of 10.0 A with an additional 3.0 A active Miller clamp.
The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to
support 3.3 V microcontrollers.
Data transfer across the isolation barrier is realized by the coreless transformer technology.
All variants have logic input and driver output undervoltage lockout (UVLO), and active shutdown.
The gate drivers are certified according to UL 1577.
Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled
The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under voltage lockout
Product Info: IKW25N120H3
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