200 V high-side truly differential input (TDI) gate driver IC EiceDRIVER™ 1EDN7146G optimized for CoolGaN™ SG HEMTs and Silicon MOSFETs

Open online SPICE simulator circuit link: power_200VDC_high_side_gate_driver_1EDN7146G.tsc

200 V high-side TDI gate driver IC EiceDRIVER™ 1EDN7146G optimized for
CoolGaN™ SG HEMTs and Silicon MOSFETs

The 1EDN7146G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky Gate
HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that
enable a high-performance system design with fast-switching transistors, including Truly Differential Input
(TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp and adjustable charge pump.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Shoot through prevention
- Undervoltage lockout
- Short-circuit clamping
- Suppression time