600 V three-phase gate driver IC IRS23365DM with over current protection, enable, fault reporting and integrated...

Open online SPICE simulator circuit link: power_600VDC_Three_Phase_Gate_Driver_IC_IRS23365DM.tsc

600 V three-phase gate driver IC IRS23365DM with over current protection,
enable, fault reporting and integrated bootstrap FET

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under-voltage lockout

The IRS23365DM is a high voltage, high speed power MOSFET and IGBT drivers
with three independent high and low side referenced output channels for 3-phase
applications. Proprietary HVIC technology enables ruggedized monolithic construction.
Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Propagation delays are matched to simplify use
in high frequency applications. The floating channel can be used to drive N-channel power
MOSFETs or IGBTs in the high side configuration which operates up to 600 V.