600 V Half Bridge Gate Driver IC IR2111S with shoot through protection

Open online SPICE simulator circuit link: power_600VDC_half_bridge_gate_driver_IR2111S.TSC

600 V Half Bridge Gate Driver IC IR2111S with shoot through protection

The IR2111S is a high voltage, high speed power MOSFET and IGBT driver with dependent
high and low side referenced output channels designed for half bridge applications.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic
construction. Logic input is compatible with standard CMOS outputs. The output drivers
feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600 volts.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under-voltage lockout