600 V, 2.3 A high side and low-side Gate Driver IC IR21814S

Open online SPICE simulator circuit link: power_600VDC_high_low_side_gate_driver_IR21814S.TSC

600 V, 2.3 A high side and low-side gate driver IC IR21814S

The 2ED21814S is a high voltage, high speed power MOSFET and IGBT driver with independent high
and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent
ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up
to - 11 VDC on VS pin (VCC =15 V) on transient voltages. There are not any parasitic thyristor
structures present in the device, hence no parasitic latch up may occur at all temperature and voltage
conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET
or IGBT in the high side configuration, which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under-voltage lockout