650 V, 2.5 A High Current Half Bridge Gate Driver IC EiceDRIVER™ 2ED21834S06J with integrated bootstrap diode

Open online SPICE simulator circuit link: power_650VDC_half_bridge_gate_driver_2ED21834S06J.TSC

650 V, 2.5 A High Current Half Bridge Gate Driver 2ED21834S06J
with integrated bootstrap diode

The 2ED21834S06J is a half-bridge high voltage, high speed power MOSFET and IGBT driver with
independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an
excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of
up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures
present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. T
he logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers
feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration,
which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode