650 V, 0.36 A Half Bridge Gate Driver IC EiceDRIVER™ 2ED2304S06F with Integrated Bootstrap Diode (SOI technology)

Open online SPICE simulator circuit link: power_650VDC_half_bridge_gate_driver_BSD_2ED2304S06F.TSC

650 V, 0.36 A Half Bridge Gate Driver IC EiceDRIVER™ 2ED2304S06F with Integrated
Bootstrap Diode (SOI technology)

EiceDRIVER™ 650 V Infineon SOI half-bridge gate driver IC with integrated Bootstrap Diode for IGBTs and
MOSFETs with 0.36 A source and 0.7 A sink currents in DSO-8 package.

The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent
ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL
logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent
protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode