650 V High Side and Low Side Gate Driver IC EiceDRIVER™ 2ED2101S06F with integrated bootstrap diode

Open online SPICE simulator circuit link: power_650VDC_high_low_side_gate_driver_2ED2101S06F.TSC

650 V High Side and Low Side Gate Driver IC EiceDRIVER™ 2ED2101S06F
with integrated bootstrap diode

The 2ED2101S06F is a high voltage, high speed power MOSFET and IGBT driver
with independent high and low side referenced output channels. Based on Infineon’s
SOI-technology there is an excellent ruggedness and noise immunity with capability
to maintain operational logic at negative voltages of up to - 11 VDC on VS pin
(VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures
present in the device, hence no parasitic latch up may occur at all temperature
and voltage conditions. The logic input is compatible with standard CMOS or LSTTL
output, down to 3.3 V logic. The output drivers feature a high pulse current buffer
stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side
configuration, which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Undervoltage lockout
- Bootstrap diode