650 V, 2.5 A High Current High Side and Low Side Gate Driver IC EiceDRIVER™ 2ED21814S06J with integrated bootstrap diode

Open online SPICE simulator circuit link: power_650VDC_high_low_side_gate_driver_2ED21814S06J.TSC

650 V, 2.5 A High Current High Side and Low Side Gate Driver
2ED21814S06J with integrated bootstrap diode

The 2ED21814S06J is a half-bridge high voltage, high speed power MOSFET and IGBT
driver with independent high and low side referenced output channels. Based on Infineon’s
SOI-technology there is an excellent ruggedness and noise immunity with capability to
maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V)
on transient voltages. There are not any parasitic thyristor structures present in the device,
hence no parasitic latch up may occur at all temperature and voltage conditions.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET,
SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode