200V Boost Converter with CoolMOS™ P6 and EiceDRIVER™ 2EDN7524F

Open online SPICE simulator circuit link: power_boost_200V_gate_driver_low_side_direct_2EDN7524x.tsc

EiceDRIVER™ in a Boost Converter (PFC)
with CoolMOS™ C7 and CoolSiC™ G5

EiceDRIVER™ 2EDN7524F is a fast Dual-Channel 5A Gate Driver optimized
for driving both Standard and Superjunction MOSFETs, as well as GaN power
switching devices.

CoolMOS™ C7 IPP60R180C7 product family is designed to enable higher system
efficiency whilst being easy to design in.

CoolSiC™ IDH06G65C5 showing improved efficiency over all load conditions,
coming from both the improved thermal characteristics.

A 800W CCM power factor correction (PFC) demoboard is available with the following
demonstrated Performance:

110/230 AC to 400 DC, 97.8% peak efficiency, 130kHz-high power density.

{1. click here to set application parameters}
{2. click on Run to calculate components}
{3. click Simulate Transient }

{switching frequency}
fs:= 130k {use 65k ... 130k}
{duty cycle}
Duty:=0.25 {use 0.1 ... 0.9}
{gate resistor}
rg:=15 {use 1.5 ... 30}
{bulk capacitor VDD }
C2:= 150n {use 100n .. 2u}
R5:= 15 {use 1 .. 30}
{driver voltage}
VDD:=12 {use 0 .. 20}
{input voltage}
V_IN:=300 {use 100 ... 400}
{output load}
R1:=200 {use 200 .. 20k}
{===DO NOT CHANGE BELOW========}
V_IN1:=V_IN
T:=1/fs
T_ON:= Duty*T {on time}
T_OFF:=T-T_ON
PWMT2:=T_ON
PWMT4:=T_OFF
R2:=rg
R3:=rg

Test EiceDRIVER™ 2EDN7524F in interaction with MOSFET
for example:
- set VDD below 4.5V => Undervoltage Lockout (UVLO)
- R2/R3 and responding current Peaks on VDD
- Driver Output versus MOSFET gate at higher gate resistors R2/R3