RF low noise bipolar transistor BFP640ESD, high linearity active antenna 2nd stage LNA for SDARS Receiver

Open online SPICE simulator circuit link: rf_BFP640ESD_SDARS.tsc

Very low noise RF bipolar transistor BFP640ESD, high linearity active antenna
2nd stage LNA in the SDARS Receiver

- Input matching and DC blocking (C1)
- RF decoupling (C2)
- RF decoupling (C3)
- RF decoupling (C4)
- Output matching and stability improvement (C5)
- Output matching and DC blocking (C5)
- DC biasing (R1)
- Base DC biasing (R2)
- Low-frequency stability improvement (R3)
- Input matching (L1)
- Output matching (L2)

The BFP640ESD is an RF bipolar transistor based on SiGe: C technology that is part of
Infineon’s established sixth generation transistor family. Its ESD structure, high RF gain,
and low noise figure characteristics make the device suitable for a wide range of wireless
applications. It remains cost-competitive without compromising on ease of use.

This transistor provides high gain (18.56 dB@2320 MHz) using Infineon Designer

Target application:
- Active antenna 2nd stage LNA in the SDARS Receiver