High gain and Low Noise Amplifier using BFP640FESD for GNSS application
Open online SPICE simulator circuit link: rf_BFP640FESD_GNSS.tsc
High gain and Low Noise Amplifier using BFP640FESD for GNSS application
- Input matching and DC blocking (C1)
- RF decoupling (C2, C3)
- Output matching (C4)
- Output matching and DC blocking (C5)
- DC bias (R1, R2)
- Low-frequency stability improvement (R3)
- Output matching and stability improvement (R4)
- Input matching (L1)
- Output matching (L2)
The BFP640FESD is a RF bipolar transistor based on SiGe:C technology that is part of
Infineon’s established sixth generation transistor family. Its ESD structure, high RF gain
and low noise figure characteristics make the device suitable for a wide range of wireless
applications. It remains cost competitive without compromising on ease of use.
This transistor provides high gain (20.4 dB@1575 MHz) using Infineon Designer
Target application:
- Global Navigation Satellite Systems (GNSS)
Product info: BFP640FESD
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