Ultra Low Noise RF Transistor BFP740FESD for 2.45 GHz WLAN Application
Open online SPICE simulator circuit link: rf_BFP740FESD_WLAN.tsc
Ultra Low Noise RF Transistor BFP740FESD for 2.45 GHz WLAN Application
- Input matching and DC blocking (C1)
- RF decoupling (C2, C3)
- Output matching and stability improvement (C4)
- Output matching and DC blocking (C5)
- DC bias (R1, R2)
- Low-frequency stability improvement (R3)
- Output matching and High-frequency stability improvement (R4)
- RF choke and Input matching (L1)
- RF choke and Output matching (L2)
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction
wideband Bipolar RF Transistor (HBT) with an integrated ESD protection
This transistor provides high gain (16.63 dB@2.45 GHz) using Infineon Designer
Target application:
- Wireless Local Area Network (WLAN)
Application note
Radio Frequency (RF) Community forum
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Product info: BFP740FESD
Simulate: Network Analysis