Embedded Flash IP Solutions
Highly reliable and low-power embedded flash (eFlash) memory solutions for enabling next-generation automotive and IoT applications
Embedded flash (eFlash) memory is a key enabling technology for many semiconductor products requiring low power and high reliability. For example, microcontrollers use eFlash to store program instructions (code) as well as data on which processing is performed. Infineon licenses certain flash memory IP for these use cases. Contact us for details.
- SONOS technology
- Industrial and automotive grade
- Cost-effective embedded NVM
- Ultra low-power
- 100K endurance
- Highly scalable technology
Robust, proven, and high-performance embedded flash for your SoCs
IoT devices use embedded Flash to enable smart, flexible, and secure products that can be updated wirelessly, or over-the-air (OTA). Electronic devices with embedded Flash enable a wide-range of products from smart cards and wearables to factory automation systems and autonomous vehicles.
Infineon offers SONOS (Silicon Oxide Nitride Oxide Silicon) Flash technology to cover the application requirements from low-cost consumer to high-performance automotive. SONOS technology is very compatible with CMOS and has been integrated into foundry-standard logic processes while preserving CMOS device models and existing design IP.
Infineon leverages SONOS technology in our microcontroller products (MCUs) for consumer, industrial and automotive markets. We've shipped billions of MCUs containing our embedded Flash technology over nearly two decades, demonstrating that our embedded Flash solutions are robust and proven. And, Infineon makes our embedded Flash solutions available for licensing to third-party companies.
Cost-effective solution for low-power applications
Infineon's patented and proprietary SONOS embedded flash technology was developed to meet the low-power requirements of cost-effective MCUs. Since its launch in 2001 on 350 nm, SONOS embedded flash has progressed and is now available in volume production on various advanced nodes, including 130 nm, 65 nm, 55 nm, 40 nm, and 28 nm.
The SONOS eFlash bit cell consists of two transistors: a SONOS (control gate) and a MOS (select gate) and employs a low-power FN tunneling mechanism for efficient program and erase operations.
Infineon's SONOS embedded flash macro families provide robust embedded flash solutions for next-generation SoCs. These solutions offer several benefits,
- Low additional mask count
- 25 ns read access time
- Power-saving modes
- Macro densities ranging from 0.25 Mb to 16 Mb
- Temperature ranges of -40°C to +125°C (Industrial+ and Auto Grade 2)
- 100,000 write endurance cycles
- Ten years of data retention
|
Empowering secured IoT, smart card, automotive, and AI applications
Process License
Infineon SONOS embedded flash process technology is available for licensing to foundries. Under this license, Infineon transfers specific technology information to enable the integration of the embedded flash technology into a specific logic or mixed-signal process for wafer manufacturing at the foundry, without any design rule or model changes to the base line process.
Design Creation License
Infineon SONOS embedded flash design technology is available for licensing to fabless semiconductor companies, IDMs, and foundries with design IP development teams. Under this license, Infineon transfers design information necessary for creation of new embedded flash macro designs.
Design Use License and Design Services
Customers can license off-the-shelf silicon-validated SONOS macro IPs. This option establishes the fastest path to market. Additionally, Infineon has a team of experienced engineers dedicated to providing custom flash macro design services.
Globally available advanced manufacturing
Infineon SONOS embedded flash technology is available across wide range of technology nodes, offered by UMC, HLMC, HHGrace, and SkyWater. Contact us for more details.
eCT™ is a patented and proprietary NOR Flash technology that Infineon developed for high-performance MCUs with stringent reliability requirements. eCT™ Flash is based on charge-trap technology that has been proven in volume production in six technology generations of MirrorBit® NOR Flash memory. eCT™ has been in volume production at the 40 nm node since 2016.
eCT™ Flash bit cell uses a split-gate (1.5T) architecture in which one transistor is a Memory Gate (MG) that stores non-volatile data, and the other is a Select Gate (SG). The threshold voltage (Vt) of MG can be changed by adding or removing the electric charge from the nitride layer of an Oxide Nitride Oxide (ONO) gate dielectric.
MG is programmed by channel hot electron injection (CHEI); Vt is increased by injecting electrons into traps within the nitride layer of ONO. The erase operation is accomplished by band-to-band tunneling (BTBT) hot hole injection. Vt is decreased by injecting holes into traps within the ONO nitride layer.
The Infineon 40 nm eCT Flash technology offers the most scalable high-performance, high-reliability embedded Flash solution for storing critical code and data with automotive reliability.
- Random access time of 8 ns
- Fast word-programming speed
- Industry-leading bit cell size on 40 nm node and validated bit cell at 22 nm
- Densities from 512 kb up to 64 Mb
- Word size: 32 or 64 bits
- AEC-Q100 qualification passed for Automotive Grade 1
- Temperature ranges: Automotive Grade 1 (-40°C to +125°C)
- Superior write endurance and data retention
|
||||||||||||||||||||||||||||||||||||||||||||
|
