IGLD65R055D2 CoolGaN™ Transistor 650 V G5
概要
The IGLD65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
特長
- 650 V e-mode power transistor
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Low dynamic RDS(on)
- High ESD robustness: 2 kV HBM - 1 kV CDM
- Bottom-side cooled package
- JEDEC qualified (JESD47, JESD22)
利点
- Supports high operating frequency
- Enables highest system efficiency
- Enables ultrahigh power density designs
- Supports BOM cost savings
サポート