1ED3830MC12M
EiceDRIVER™ Enhanced 3 A, 5.7 kV single-channel highly flexible isolated gate driver with ±3 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.
1ED3830MC12M belongs to the EiceDRIVER™ Enhanced 1ED38xx family (X3 digital family) – single-channel isolated gate driver with adjustable control and protection functions including DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO), and Fault, to simplify the design of highly reliable systems. All parameter adjustments are done from the input side via the I2C interface (pin SDA and SCL). 1ED3830 is suitable for IGBTs, SiC and Si MOSFETs.
The digitally configurable approach enable customers for predictive maintenance in sophisticated industrial systems. For example, 1ED38xx is able to register the counts of UVLO spikes, monitor the supply voltage and temperature increase. With the long-term analysis of the collected data, customers are able to decide when is the best time to schedule a maintenance cycle before the system fails. The I2C interface also enables rapid prototyping without hardware changes.
1ED3431 (X3 Analog) version available, with active Miller clamp (clamp driver for external MOSFET), adjustable DESAT and Soft-off.
特長
- Highly flexible EiceDRIVER™ Enhanced single channel isolated gate driver 1ED38xx family (X3 Digital family)
- For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- ±3 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- Separate source and sink outputs with two-level turn-off
- Active Miller clamp
- Precise and temperature compensated VCEsat detection (DESAT) with fault output
- IGBT soft turn-off after desaturation detection
- FLT and RDY status signaling to µController
- Parameter adjustment from input side via I2C bus:
- Undervoltage lockout (UVLO)
- Active Miller clamp
- DESAT protection
- Soft turn off
- Two level turn off
- Over temperature shutdown
利点
- Over-temperature shut down at 160 °C (±10 °C)
- Tight IC-to-IC propagation delay matching (30 ns max.)
- High common-mode transient immunity CMTI >200 kV/μs
- Suitable for operation at high ambient temperature up to 125 °C
- Small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm)
- UL 1577 VISO = 6.84 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
- Enable fast design cycles and the best-in-class DESAT accuracy thanks to low external component count and the adjustable DESAT with Soft-off
- IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, reinforced)
- The precise threshold and timings, combined with UL 1577 and IEC 60747-17/VDE 0884-11 certifications enable superior application safety
- Perfect fit for all applications requiring a reliable DESAT protection, benefiting from an active Miller clamp and preferring small PCB space requirements
EiceDRIVER™ X3 Enhanced Family: 1ED38xx
- EiceDRIVER™ Enhanced now include 1ED38XX (X3 Digital), with I2C configurability for DESAT, Soft-Off, UVLO, Miller clamp, TLTO and Fault
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
