650 V GaN HEMT用ゲートドライバーIC
Recommended EiceDRIVER™ gate driver ICs for 600 V/650 V GaN HEMTs
Wide-bandgap semiconductors allow higher electric field strengths and thus result in significantly smaller high-voltage switches compared to silicon alternatives. Consequently, GaN-based power devices can operate at high switching frequencies without compromising efficiency. Infineon’s CoolGaN™ gate injection transistor (GIT) technology is based on a hybrid-drain HEMT with p-GaN gate resulting in a robust normally-off power switch. To deal with the particularities of this concept, an innovative differential gate-drive concept has been implemented in tailor-made gate driver ICs of the EiceDRIVER™ 1EDx56x3 product family optimized for CoolGaN™ GIT HEMTs.
Nevertheless, in many applications, standard gate driver ICs can also be employed when coupled to an RC interface to generate both the required small steady-state current and the turn-on/turn-off peak currents. Dual-channel drivers of the EiceDRIVER™ 2EDxx259 product family feature dead-time control (DTC) and shoot-through protection (STP) to ensure safe operation in half-bridge topologies using a single IC. A hybrid gate driving configuration for half-bridge topologies, composed of two single-channel gate driver ICs of the EiceDRIVER™ 1EDBx275F and 1EDNx550B, allows optimizing the driver IC placement on the PCB in order to minimize the gate loop parasitic inductances. This results in a PCB area saving (compared with a dual-channel gate driver IC) and it comes with a highly competitive bill-of-material (BOM).
To summarize, the 1-channel and 2-channel gate driver ICs of the EiceDRIVER™ family are the best
choices to match with Infineon’s CoolGaN™ GIT HEMTs and achieve an optimum combination of efficiency, power density, and robustness in high-performance power conversion applications.
Potential applications:
- Totem-pole PFC and resonant LLC in server, telecom
- Multilevel topologies in microinverter and energy storage
- Inverter in motor control and drives
- Power supply in smart TV
- Fast turn-on and turn-off slew rates in source and sink driving currents
- Short propagation delay with best-in-class accuracy
- Extended common-mode transient immunity (CMTI) robustness
- Functional, basic, and reinforced galvanic isolation grades available
- Multiple under-voltage lookout (UVLO) options
- Shoot-through protection (STP) option
- Dead-time control (DTC) option
- Fast output clamping
- Low impedance outputs
- Safe off-state at extremely fast transients
- Low switching losses
- Low dead-time losses
- Excellent immunity against switching noise
- Hardware-based protection to stay in safe operation area
- Avoid spurious turn-on, even for the first pulse or after a burst mode operation
- Enable reliable operation at high switching frequency
Watch latest video
Watch this video to find the latest solutions to drive high voltage SiC MOSFETs and GaN HEMTs using dedicated EiceDRIVER™ single-channel and dual-channel gate driver ICs as shown in the EVAL_2EDB_HB_GaN, KIT_1EDB_AUX_GaN, and KIT_1EDB_AUX_SiC demo boards. These small demo kits have a configurable isolated bias supply that allows to generate different positive and negative voltage levels with 1% voltage regulation and power levels up to 1.5 W. Speed up your design cycle and reduce time to market with these simple to use building blocks.
A quick look at Infineon’s evaluation board, EVAL_2EDB_HB_GAN. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. A simple GaN half-bridge with dedicated GaN driver ICs contributes to the design of this board and help deliver an easy setup and use environment for the end user.
This 3 part video series shows of the 600 V gallium nitride (GaN) half-bridge evaluation board, which enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors.
This 3 part video series shows of the 600V gallium nitride (GaN) half-bridge evaluation board, which enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors.
This 3 part video series shows of the 600 V gallium nitride (GaN) half-bridge evaluation board, which enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors.
Explore CoolGaN™ - the new power paradigm featuring GaN EiceDRIVER™. Ultimate efficiency and reliability. Watch this unboxing video!
GaN devices have an ultra low turn-on threshold and to properly drive them it is important that there is a negative gate voltage provided when the HEMT is intended to turn-off. In that way, it is fast turned off. Secondly, this gate drivers can hold the gate voltage firmly at zero when the HEMT is intendeded to turned-off. No spurios turn-on of the HEMTs.
Watch latest webinar
Watch this On-Demand Webinar and discover our broad driving solutions for GaN. Learn the key gate driver requirements for different GaN concepts and their possible gate drive concepts.
